EE 396K-21 – Nanoscale Dvice Phys/Tech

Course Details
Unique Number16960
Instructor Jack C. Lee
Meeting Days / TimeLecture: MW, 9:00 a.m.-10:30 a.m.
LocationWAG 420
Course Description

Theory of electron, magnetic, and electro-optic devices. Physical principles and operational characteristics of semiconductor devices. Physics of metal-oxide-semiconductor field-effect transistors (MOSFET) and bipolar junction transistors (BJT). Advanced discussion of short-channel effects, ultra-thin oxide and high-K gate dielectrics, semiconductor interface characterization, hot-electron effects, lightly-doped drain devices (LDD), subthreshold characteristics, complementary-symmetry metal-oxide- semiconductor (CMOS) latchup, gate-induced leakage current of MOSFETs, poly-depletion and quantum mechanical effects, silicon on insulator (SOI) devices, strained-Si, advanced 3-D devices and bandgap narrowing effect, Webster effect, Kirk effect, punchthrough and avalanche breakdown, base transit time for bipolar transistors, and scaling issues of both BJT and MOSFETs.

Prerequisites

Prerequisite: Graduate standing and consent of instructor. Additional prerequisite: Electrical Engineering 339 or the equivalent.

Course number may be repeated for credit when the topics vary.